国家/地区 美国（26） 中国（15） 世界知识产权组织（14） 日本（11） 欧洲专利局（EPO）（9） 韩国（8） 台湾（4） 加拿大（3） 澳大利亚（2） 香港（2） 以色列（2） 印度（2） 墨西哥（2） 俄罗斯（2） 新加坡（2） 南非（2）
IPC部 B（28）
IPC大类 C01（28） B82（27） H01（13）
B01（9） B32（9） C09（4）
B05（3） C07（2） C22（2）
C23（2） F16（2） H05（2）
IPC小类 C01B（28）
IPC C01B031/00（28）
发明人 HIROHASHI T（2）
公开年 2012（28）
申请年 2011（14）  2012（11）  2010（3） 
专利权人 KOREA INST S.（2） SAMSUNG ELEC.（2） SEMICONDUCTO.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Graphene comprising a hole, useful e.g. for coating an electrode and an active material which are useful in a power storage device and an electric appliance e.g. a display device, a lighting device and a desktop personal computer.

HIROHASHI T, ADACHI S

Making liquid foam from graphene involves preparing aqueous dispersion of graphene oxide; adding water miscible compound to aqueous dispersion of graphene oxide to produce a mixture including modified form of graphene oxide.

ALCAZAR J D, THOMAS E L, ALCAZAR JORBA D

Forming graphene, comprises flowing inert gas through chamber including graphite oxide disposed in it under first reaction conditions and exposing graphite oxide to hydrogen under second reaction conditions.

RAMAPRABHU S, KANIYOOR A, BABY T T

Graphene-based steel tubes, pipes or risers used for conveying petroleum, gas and biofuels, and for use in underwater riser systems for deep water with direct application in petroleum industry, comprise aluminum, cobalt, copper and chromium.

CARVALHO A L M D, ZURBA N K, MOREIRA DE CARVALHO A L, MOREIRA D C A L

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Manufacture of graphene for nanoelectronics, involves mixing graphite powder with concentrated sulfuric acid, oxidizing using potassium permanganate, reducing and dispersing.

GUBIN S P, CHEGLAKOV A V, BUSLAEVA E Y, TKACHEV S V, GELLER M M, DUDAKOV V B, BUSLAEVA E YU

Making graphene/carbon nanotube composite structure, comprises forming a graphene film on a substrate, and forming a substrate/graphene/carbon nanotube composite structure by combining a carbon nanotube layer with the graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Carbon nanostructure used as e.g. negative electrode of lithium secondary battery, has air-sac-like pores that are defined by graphene multilayer membrane walls and are formed in the rod-shaped materials or the sheet-shaped materials.

NISHI N, MIZUUCHI K, ADACHI N, OOBA Y