国家/地区 美国（7） 世界知识产权组织（6） 日本（5） 韩国（5） 中国（4） 欧洲专利局（EPO）（4） 巴西（2）
IPC部 B（7）
IPC大类 B82（7） C01（7） H01（4）
B32（2） C07（2） C08（2）
C09（2） C25（2） C30（2）
G01（2）
IPC小类 C01B（7）
IPC C01B032/182（7）
发明人
公开年 2011（7）
申请年 2011（5）  2010（2） 
专利权人

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Forming graphene thin films/functionalized graphene coatings, comprises providing conducting substrate and electrophoretically forming graphene or functionalized graphene using solution comprising e.g. exfoliated graphene sheets.

BANERJEE S, WHITTAKER L, LEE V, WHITAKER L

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S

Composition useful for producing photovoltaic device and nanostructure assembly of graphene quantum dots, and for producing soluble graphene quantum dot, comprises a population of graphene quantum dots.

LI L, XIN Y, YAN X

Graphene device e.g. graphene-based inverter has electrodes and graphene channel which are formed on upper oxide layer formed on embedded gate.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H, JEONG H J, KIM T C, SEO S A, U Y S, CHUNG H J, KIM D C, WOO Y S, HEO J

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V