国家/地区 美国（3） 世界知识产权组织（3） 中国（2） 日本（2）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B032/182（5）
发明人
公开年 2017（4）
申请年 2016（5）
专利权人

Graphene element and its production method mainly to heat a thermofusible material to a molten state and spread a graphene material onto the material of molten state.

LIANG Y

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B