国家/地区 美国（3） 世界知识产权组织（3） 台湾（2）
IPC部 C（5） H（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/182（5）
发明人
公开年 2022（5）
申请年 2022（3）  2021（2） 
专利权人

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H