国家/地区 美国（37）
IPC部 C（37） B（19） H（13）
G（6） D（3） F（2）
IPC大类 C01（37） H01（12） B82（9）
C08（7） B01（5） G01（5）
B29（3） B32（3） C09（3）
C23（3） C10（2） C25（2）
D01（2）
IPC小类 C01B（37）
IPC C01B032/184（37）
发明人 ALGHAMDI A A S（3） ALTURKI Y A（3） ELSAYED W E M（3）
ATKINS C A（2） HU M（2） LINDEMANN G W（2）
WANG Y（2） YANG C（2） ZENG H（2）
公开年 2021（25） 2022（12）
申请年 2021（37）
专利权人 UNIV KING AB.（3） CARBON HOLDI.（2） ROI OPTOELEC.（2） SHANGHAI LAN.（2）
UNIV EAST CH.（2） UNIV EAST CH.（2） UNIV EAST CH.（2） UNIV TONGJI（2）
YUNNAN HUAPU.（2）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Method for preparing graphene quantum material by ultrashort pulse laser-induced cracking, involves inducing reduction and conversion of graphene oxide into graphene by controlling laser scanning, and puffing prepared graphene by means of microwave heating.

YANG C, HU M, ZENG H

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Synthesizing monolayer graphene, comprises reducing metal substrate in modified, multiple inverse-diffusion flame burner, adding hydrocarbon precursor through fuel lines, and annealing flame-synthesized graphene.

KEAR B H, HONG H, TSE S D

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Upgrading coal used in graphene film, comprises cleaning coal and reacting cleaned coal residue with oxidizable inorganic metallic agent, and reacting cleaned coal residue with reducing agent to form upgraded coal.

LAUMB J, AZENKENG A

Manufacturing ultrathin graphene/polymer film involves layering graphene layer onto polymer layer to form composite film.

ESPINOSALOZA F J, KIM S H, ARACNERUDDLE C, MILLER P E, CAMPBELL P, STADERMANN M

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y

Method for making graphene membrane for use in filters and filtration, involves forcing fluid through primed substrate while retaining portion of graphene platelets within pores to yield graphene membrane comprising substrate and platelets.

OGUNTUASE N