国家/地区 日本（3） 美国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B32（4）
IPC小类 B32B（4）
IPC C01B032/956（4）
发明人 ADACHI M（2） TATENO Y（2） YAMAMOTO Y（2）
公开年 2021（2）
申请年 2020（3） 
专利权人 SUMITOMO ELE.（2）

Producing graphene by forming buffer layer made of silicon oxycarbide and single layer of graphene formed on buffer layer on surface of silicon carbide substrate by heating silicon carbide substrate in atmosphere of acetylene gas and oxygen gas, and peeling single layer of graphene.

TANIYASU Y, SASAKI K, TANAKA S, KAJIWARA T

Laminate used in electronic device, comprises base portion composed of silicon carbide and having specific surface which is silicon surface and graphene film on specific surface, where ion mass distribution in depth direction of laminate obtained by time-of-flight secondary ion mass spectrometry.

MIHASHI F, ADACHI M, YAMAMOTO Y, TATENO Y

Layered body useful in electronic element, such as transistor, comprises base portion comprising silicon carbide and having surface which is silicon surface, and carbon atom thin film arranged over surface and comprising carbon atoms.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F