国家/地区 美国（5） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 台湾（3） 日本（2） 韩国（2）
IPC部 B（5）
IPC大类 C01（5） C23（5） B05（2）
B32（2） B82（2） C30（2）
H01（2）
IPC小类 C01B（5）
IPC C23C014/48（5）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2010（2）
申请年 2009（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND.（2）

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C