国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） H01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2021（5）
申请年 2021（5）
专利权人 UNIV SINGAPO.（2）

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Preparing neodymium-graphene composite material used as electrode material in electrolytic water hydrogen production device or as cathode material in fuel cell or metal-air battery, comprises preparing neodymium simple substance on graphene.

SA G, CHEN L, LIANG T, DENG Y, SAGAR R U R