国家/地区 韩国（3） 英国（2） 台湾（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5） C30（5） C23（4）
H01（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 DIXON S（2） GUINEY I（2） HONG B H（2）
公开年 2022（5）
申请年 2021（3）  2022（2） 
专利权人 GRAPHENE SQU.（2） PARAGRAF LTD（2） UNIV SEOUL N.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K