国家/地区 美国（4） 韩国（3） 台湾（2） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC H01J037/32（5）
发明人
公开年
申请年 2013（2）  2015（2） 
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A