国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6） H01（6） B82（2）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人 KIM H（2） LEE J（2）
公开年 2016（6）
申请年 2015（3）  2016（3） 
专利权人 UNIV SEOUL N.（2） UNIV SEOUL N.（2）

Perovskite-based solar cell used for optoelectronic device, consists of graphene layer as conductive transparent electrode.

CHOI M S, SUNG H, AHN N, LEE J, JANG M S, SOO C M, KWON L J, SEOK J M, YOON J, CUI W, JANG M

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Method for forming nano-gaps in graphene used in e.g. electronic device, involves applying voltage across third region of single layer graphene such that nano-gap extending across the entire width of single layer graphene is formed.

BRIGGS G A D, MOL J A