国家/地区 韩国（7）
IPC部 B（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/06（7）
发明人 CHUL O（2） HAN D（2） HAN D Y（2）
HYOONG Y L（2） HYUN W L（2） JANG K I（2）
KANG I J（2） KIM M（2） KIM M S（2）
LEE H W（2） LEE H Y（2） LEE W S（2）
OH C（2）
公开年 2017（3）
申请年 2016（3） 
专利权人 ILJIN DIAMON.（2） KOREA INST S.（2）

Composite useful in nanofluid which is used in vehicle, comprises a graphene oxide, and a nanodiamond that is bonded on a surface of the graphene oxide.

SONG K H, KIM B W, KWAK J, CHA J, LYO I W, LEE H S, SONG K, KWOK J, CHE Z, LV Y, LI H

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce unreacted graphite, immersing sintered component in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce component containing unreacted graphite, immersing in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Preparation of diamond-like carbon film for molded article, involves forming graphene layer on substrate by chemical vapor deposition, separating single layer, depositing two graphene layers and carrying out hydrogen plasma treatment.

SHIN H S, YOON S I

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K

Graphene nanoribbons preparation for electronic device comprises exposing carbon nanotubes to alkali metal source in the absence of solvent, and adding electrophile to form functionalized graphene nanoribbons.

TOUR J M, KOSYNKIN D V, TOUR J, KOSYNKIN D

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U