国家/地区 中国（42） 世界知识产权组织（5） 美国（4）
IPC部 C（44）
IPC大类 C01（44） H01（14） B82（7）
C30（7） C23（3） C08（2）
IPC小类 C01B（44）
IPC C01B031/04（39） H01L021/02（7） B82Y040/00（6）
C30B029/02（5） C01B031/02（4） B82Y030/00（3）
C23C016/26（3） C08K003/04（2） C23C016/02（2）
C23C016/56（2） C30B025/18（2） H01L021/205（2）
H01L021/324（2） H01M004/38（2）
发明人 ZHANG Y（44）
公开年 2012（31） 2013（9） 2014（4）
申请年 2012（44）
专利权人 UNIV XIDIAN（26） ZHANG Y（4） DENG P（2） GUO H（2）
INST PROCESS.（2） LEI T（2） UNIV HEILONG.（2） UNIV PEKING（2）
ZHANG K（2）

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Controlling surface potential of graphene-based material by dispersing graphite powder in solvent, sonicating, adding oxidizing or reducing agent and/or specific functional group-containing chemical reagent, dispersing, and refluxing.

CAO H, LI M, LIU C, ZHANG Y

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z

Composition used for removing components from fluids e.g. sewage water and waste water, and for forming capacitor, comprises structure having graphene sheets and carbon nanotubes disposed between graphene sheets.

WEI L, ZHANG Y

Preparation of graphene composite material involves suspending multilayer stack of graphene as graphene sheet in solvent and obtaining graphite suspension, and adding active substance to dispersion of graphene.

CHEN J, WU Y, XIE C, LIN G, LIN J, ZHANG Y, PENG C

Preparation method for graphene composite material characterized by greatly increasing surface area, electric conductivity and charge/discharge speed of electric capacitance.

WU Y, XIE C, ZHANG Y, PENG C, CHEN J, LIN G, LIN J

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E

Graphene film preparation comprises providing graphene thin film grown on substrate, spin-coating polyvinyl alcohol acetal glue on film surface, and suspending whole thin film in etching solution.

ZHANG Y, GAN Z, FENG Q, WEI Y

Preparing graphene film comprises cutting silicon substrate and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, and growing carbon layer on the substrate.

LEI T, GUO H, ZHANG Y, ZHAO Y, ZHANG K, TANG X