国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人 DU C（5）
公开年 2013（5）
申请年 2013（5）
专利权人 CHONGQING IN.（5） CHONGQING MO.（4）

Transferable graphene film has graphene layer, release layer and adhering film layer.

DU C, LI C, LI Z, SHAO L, SHI H, ZHANG Y, WEI D

Preparation of graphene involves growing graphene layer on substrate which is uniformly coated with release layer, sticking graphene layer on transfer thin film, separating substrate, and forming graphene based on transfer thin film.

DU C, HUANG D, LI C, LI Z, SHAO L, SHI H, WEI D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y

Rapidly and non-destructively transferring graphene comprises coating adhesive on the surface of a target substrate, adhering with graphene, performing hot-press treatment or UV-irradiation curing treatment and growth substrate stripping.

DU C, HUANG D, LI C, LI Z, SHI H, TANG L, ZHANG Y

Preparation device of graphene, has growth chamber which is connected with vacuum-pumping device, and growth substrate of growth chamber is wound on coil that is connected with alternating current source.

SHI H, LI Z, DU C, ZHANG W