国家/地区 美国（4） 韩国（3） 世界知识产权组织（3） 中国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5） B01J019/08（2） B82Y040/00（2）
C01B031/02（2） H01B001/04（2） H01L021/268（2）
发明人 LEE K（5）
公开年 2012（3）
申请年 2011（3） 
专利权人 KOREA ADV IN.（2） LEE K（2）

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Transparent conducting film comprises graphene of specified thickness, visible transmittance and surface resistance.

LI G, WANG Y, LEE K

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K