国家/地区 日本（4） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 OKAI M（4）
公开年 2011（2）
申请年 2010（2） 
专利权人 HITACHI LTD（4） OKAI M（2） WADA Y（2）

Graphene transistor used for integrated circuit, is bottom gate-type transistor comprising gate layer containing primary graphene film and primary alumina layer, which is arranged between substrate and channel, and gate insulating film.

OKAI M

Circuit apparatus for e.g. electronic integrated circuit device, comprises graphene film which consists of several layers, metal electrode directly joined to graphene film, and another metal electrode directly joined to graphene film.

OKAI M, HIROKA M, WADA Y

Circuit apparatus for electron and optical integrated circuit apparatus comprises electrically joined graphene film and metal electrode, and aluminum oxide layer formed directly under the graphene film.

OKAI M, HIROKA M, WADA Y, HIROOKA M

Substrate having graphene film used in electronic/photonic device comprises base substrate, patterned aluminum oxide film formed on base substrate, and graphene oxide film having graphene atomic layer.

OKAI M, HIROOKA M, WADA Y, IWAI Y, HONMA S, ASHIGAHARA T, TAKAYUKI A, YOSHIAKI I, SHUNICHI H, HIROKA M, HOMMA S