国家/地区 韩国（4） 美国（4） 世界知识产权组织（4） 日本（3） 中国（2） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC B01J023/72（5）
发明人 CHIBA G（2） CHIBA Y（2） TATSUYA Y（2）
YAMAJI T（2） YOSHIHIRO C（2）
公开年 2012（2） 2013（2）
申请年 2012（5）
专利权人 JX NIPPON MI.（2） NIPPON MININ.（2） NIPPON MININ.（2）

Manufacturing method of graphene involves growing copper single crystal film on spinel single crystal plane substrate, and growing graphene by chemical vapor deposition method with carbon-containing source gas.

NOZAWA K, YOSHII S

Producing graphene, comprises forming structures on surface of face-centered cubic metal catalyst substrate having specified orientation, and supplying hydrocarbon to substrate.

KIM K H, MAENG K S, PARK C W, CHA S W, HONG S Y, HONG B H, JUNG M H, KIM K E, PARK S B, BEOM P S, EUN K G, HUI H B, HUI J M, HYEONG K G, SEOP M G, U P C, WON C S, YEON H S

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil for manufacturing graphene, has specified total number of oxide and sulfide having specified diameter with respect to elemental-analysis measurement of surface using scanning electron microscope.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G