国家/地区 美国（7） 中国（5） 韩国（5） 世界知识产权组织（5） 日本（4） 欧洲专利局（EPO）（3）
IPC部 B（7）
IPC大类 B82（7） C01（7） C23（5）
H01（3） B32（2）
IPC小类 B82Y（7）
IPC B82Y030/00（7）
发明人 HONG B H（2） JUNG M H（2）
公开年 2012（4） 2011（2）
申请年 2011（7）
专利权人 UNIV SUNGKYU.（2）

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O