国家/地区 中国（31） 美国（19） 世界知识产权组织（15） 韩国（10） 欧洲专利局（EPO）（8） 日本（7） 英国（3） 台湾（2）
IPC部 C（44）
IPC大类 C01（44） C23（15） H01（13）
B82（12） B32（5） B01（3）
C30（3） G06（3） B05（2）
C08（2） C12（2） G01（2）
IPC小类 C01B（44）
IPC C01B032/186（44）
发明人 TAN H（4） ZHANG X（4） WANG W（3）
YANG J（3） CHEN J（2） CHO K（2）
GE C（2） GUO X（2） HE M（2）
JIANG D（2） JIANG J（2） LEE E（2）
LEE J（2） LI C（2） LI M（2）
公开年 2016（44）
申请年 2015（20）  2016（17）  2014（7） 
专利权人 WUXI GRAPHEN.（4） SNU R DB FO.（2） UNIV SEOUL N.（2） UNIV SOUTHEA.（2）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Three-dimensional cage-like nano graphene material used as catalyst carrier or adsorbent material for manufacturing supercapacitors and lithium-ion battery has graphene thickness and cage diameter of specified range.

CHANG J, LIU B, LIU M, LIU R, SHAO Y, TANG Y

Preparing three-dimensional graphene involves depositing metal substrate on surface of wire mesh to obtain mesh template, growing graphene on template by chemical vapor deposition to obtain graphene-grown mesh template and etching with acid.

YANG G, WANG W, LIU Z

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Preparation of graphene-based two-dimensional layered heterojunction includes passing hydrogen and a carbon source gas into reaction chamber including metal substrate, and heating to dissolve carbon in the metal substrate.

CHEN S, LI X

Preparation of ultrathin ultra-flexible graphene electroconductive thin film involves cutting target substrate and back film composite, pre-shrinking, forming film/graphene/substrate/back film, removing adhesive film and back film.

YANG J, TAN H, JI H

Transferring graphene prepared by chemical vapor deposition process involves processing target substrate, coating layer of polymer solution on target substrate, drying and removing solvent to obtain final product.

QIN X, YANG J, TAN H

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Manufacture of graphene for manufacturing electronic device, involves forming product nucleus of carbon 6-membered ring on substrate surface, forming carbon six-membered ring two-dimensionally around product nucleus to form graphene film.

FUJITA J, MURAKAMI K