国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 LI C（5）
公开年 2022（5）
申请年 2021（3）  2022（2） 
专利权人 UNIV KUNMING.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing graphene on surface of copper powder, involves lowering sample to room temperature within specific minutes to obtain graphene-copper composite powder, and obtaining graphene after dissolving copper powder.

TAN S, YOU X, LI C, FANG D, LI F, BAO R, LIU Y, YI J, LI G, TAO J

Method for preparing graphene by two-step chemical vapour deposition method, involves taking copper powder as catalytic substrate, removing on surface of copper powder, and taking powder solid carbon source in upstream temperature region.

TAN S, YOU X, LI C, FANG D, LI F, BAO R, LIU Y, YI J, LI G, TAO J

Preparing nitrogen-doped graphene by three-dimensional printing recyclable metal salts comprises designing double helix structure template by computer software, carrying out reduction reaction, removing metal template with dilute acid, and collecting metal salt powder for subsequent recycling.

GUAN C, LI C, DU J, FU G, XU Q

Device, has cooling chamber whose side fixed with fixing plate, fixed plate provided with driving components for driving moving plate to rise and fall, moving plate close to a side surface of cooling cavity, and moving rod installed in cooling cavity along width direction.

LI C