国家/地区 中国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 韩国（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B032/956（4）
发明人
公开年 2016（3）
申请年 2016（4）
专利权人

Preparing graphene semiconductor composite material comprises e.g. dissolving surfactant in pure water for dispersing graphene to prepare aqueous solution, and dispersing graphite powder in the aqueous surfactant solution.

CHEN Q, ZENG J, WANG L

Preparation of silicon carbide nanowire comprises mixing silicon and silicon dioxide, adding graphene, mixing, placing in vacuum sintering furnace filled with argon, vacuum sintering and cooling to room temperature.

GUO H, HU Z, XU J, ZHAN Y

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Composite material used as anode material, comprises intimate mixture consisting of lithiated or partially lithiated graphite or graphene, powdered silicon having particle size of preset range and optionally metallic lithium.

WIETELMANN U, EMMEL U, KRAEMER G, KURTH C, SCHERER S, BUHRMESTER T, KRAMER G