国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 WANG X（4）
公开年 2021（4）
申请年 2021（2） 
专利权人 BEIJING GRAP.（2） UNIV PEKING（2）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Growing graphene on a special-shaped metal substrate comprises ultrasonically cleaning special-shaped metal substrate three times with acetone, ethanol and deionized water, and adding into a melamine aqueous solution and soaking.

ZHANG X, WANG X, CHEN H

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z