国家/地区 美国（4） 中国（3） 韩国（2）
IPC部 C（5）
IPC大类 C01（5） C25（5） B32（2）
IPC小类 C01B（5）
IPC C25F005/00（5）
发明人 GUO L（2） HAN S（2） LI X（2）
公开年 2014（5）
申请年 2012（2）  2013（2） 
专利权人 INT BUSINESS.（2）

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Non-destructive method for transferring large-area graphene thin film involves aligning graphene thin film grown on metal substrate with transfer medium, and processing obtained material and platinum electrode in electrolytic bath.

DING J, YE E, GU B, WANG Q

Electrochemical etching method for removing metal substrate layer from graphene layer, involves connecting graphene layer or metal substrate layer to power source to supply current to etch metal substrate layer from graphene layer.

HAN S, GUO L, LI X

Apparatus for electrochemical or electroplating etching of copper foils from graphene for e.g. electronic device application, has anode including metal substrate layer etched from graphene layer in response to current flowing through anode.

HAN S, GUO L, LI X

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R