国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4）
IPC H01L021/02（4）
发明人
公开年 2022（4）
申请年 2022（3） 
专利权人 TAIWAN SEMIC.（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation method of surface P-type gallium oxide, involves preparing single-layer polar hydrogen fluoride graphene by surface functional growth, constructing heterojunction interface between gallium oxides/polar fluoride graphene, and obtaining surface-P-type gallium oxide without lattice damage.

HAO Y, ZHANG J, GAO X, LIN Z, SU J, YUAN H, CHANG J

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X