国家/地区 日本（5）
IPC部 B（5）
IPC大类 B23（5）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人 FURUKAWA K（2） HIBINO H（2） IKEGAMI H（2）
TAKAMURA M（2）
公开年 2015（2）
申请年 2011（2）  2013（2） 
专利权人 NIPPON TELEG.（2） UNIV KYUSHU（2）

Processing method for processing apparatus of graphene involves irradiating pulse laser to desired process location of graphene and removing graphene on desired location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Processing apparatus for forming pattern of graphene thin film, has light source that irradiates light to process location of graphene for reflectance measurement, and measurement unit that measures reflectance of light in location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Lead-free soldering for gas sensors, conductive or transparent thin films, and spin injection device contains graphene or graphite.

FUJII K, OGIMOTO Y, SHIOKAWA K

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H