国家/地区 美国（35） 韩国（30） 中国（28） 世界知识产权组织（28） 日本（17） 欧洲专利局（EPO）（7） 台湾（5）
IPC部 C（60）
IPC大类 C01（60）
IPC小类 C01B（60）
IPC C23C016/26（60）
发明人 HONG B H（7） DING G（5） FAN F Y（5）
FAN S（5） JIANG K（5） LIN X（5）
WON D K（5） XIAO L（5） XIE X（5）
HONG B（4） JIANG M（4） LIN X Y（4）
AHN J（3） AHN J H（3） CHOI I S（3）
公开年 2012（60）
申请年 2011（28）  2012（24）  2010（8） 
专利权人 SAMSUNG TECH.（8） HANWHA TECHW.（6） KOREA ADV IN.（6） CHINESE ACAD.（5）
HON HAI PREC.（5） HONGFUJIN PR.（5） SAMSUNG ELEC.（5） UNIV TSINGHU.（5）
SHANGHAI INS.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（3） KOREA ADVANC.（3）
UNIV SUNGKYU.（3） UNIV XIDIAN（3） DENG P（2） EMPIRE TECHN.（2）
GUO H（2） HANWHA AEROS.（2） ISLAND GIANT.（2） KOREA RES IN.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Method of growing graphene involves injecting carbon on inorganic substrate, forming graphite catalyst layer on carbon-injected inorganic substrate, forming multilayer board on substrate and growing graphene on multilayer board.

YOON S M, CHOI J Y, WOO Y S, SHIN H J, LEE S K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S