国家/地区 美国（6） 世界知识产权组织（6） 中国（5） 欧洲专利局（EPO）（5） 韩国（4） 日本（3） 台湾（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人
公开年 2016（6）
申请年 2015（4） 
专利权人

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S