国家/地区 中国（3） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人
公开年 2014（4）
申请年 2013（2）  2014（2） 
专利权人

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J