国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（4） C30（3） H01（3）
G11（2）
IPC小类 C01B（4）
IPC C01B031/04（4） C30B023/06（2） H01L021/02（2）
H01L043/10（2）
发明人 KELBER J（4）
公开年 2012（2） 2013（2）
申请年 2012（4）
专利权人 UNIV NORTH T.（4） KELBER J（3）

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Composition for controlled growth of graphene monolayers on a metal oxide surface, comprises a substrate, a metal oxide formed on the substrate, and graphene formed on the metal oxide.

JEFFRY K, KELBER J

Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.

KELBER J

Method for forming one-to-four-monolayer graphene layer on metal layer in manufacturing, e.g., magnetic tunnel junction (MTJ) spin filters for magnetoresistive RAM, by inducing segregation of carbon in metal layer to surface of metal layer.

KELBER J, ZHOU M, MI J U