国家/地区 美国（5） 中国（4） 台湾（4） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 日本（2） 韩国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人 KELBER J（2） LIN H（2）
公开年 2013（4）
申请年 2012（6）
专利权人 KELBER J（2） UNIV NORTH T.（2）

Magnetic memory unit manufacturing method, involves forming carbon solvent layer with upper surface that is provided with temporary base material, and forming first surface of graphene-containing layer with holes.

LIN H, LIN Y, SONG J, SUNG C, LIN I

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Producing graphene, comprises optionally forming a metal layer on a substrate, providing carbon source to form carbon-containing layer, and performing a treatment by low-frequency electromagnetic wave using microwave generator.

CHUEH Y, YEN W, LIN H, QUE Y, YAN W, CHUEH Y L, YEN W C, LIN H C

Making graphene, comprises disposing metal lithium and graphite in solution of lithium salt in solvent to gather lithium ions and solvent molecules between adjacent layers of graphite to form graphite intercalation compound and peeling off.

HE X, WANG L, LI J, GUO J, SUN W, REN J, XIANGMING H, LI W, LI J J, GUO J W, SUN W T

Composition for controlled growth of graphene monolayers on a metal oxide surface, comprises a substrate, a metal oxide formed on the substrate, and graphene formed on the metal oxide.

JEFFRY K, KELBER J

Method for forming one-to-four-monolayer graphene layer on metal layer in manufacturing, e.g., magnetic tunnel junction (MTJ) spin filters for magnetoresistive RAM, by inducing segregation of carbon in metal layer to surface of metal layer.

KELBER J, ZHOU M, MI J U