国家/地区 韩国（10） 美国（9） 中国（3） 欧洲专利局（EPO）（3） 日本（2） 世界知识产权组织（2）
IPC部 B（11）
IPC大类 B01（11）
IPC小类 B01J（11）
IPC C01B031/02（11）
发明人 CHOI J Y（11）
公开年 2009（3） 2012（3） 2014（3）
申请年 2011（4）  2008（3）  2012（2）  2013（2） 
专利权人 SAMSUNG ELEC.（9） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y

Apparatus, useful for preparing graphene-structured material for e.g. filler, comprises supply hopper to supply graphite oxide, supply line of which end is fixed to hopper, and reducing atmosphere gas supply unit connected to supply line.

JI B K, CHOI J Y, SHIN C M

Manufacture of fluorinated graphene for dispersed solution for preparing graphene used in electrical device, involves mixing fluorinating agent with expanded graphite and reacting at specific temperature.

SHIN H J, CHOI J Y, GRAYFER E, MAKOTCHENKO V, FEDOROV V

Apparatus for manufacturing nano-size graphene-structured material for filler, has feeding line that is connected to lower portion with thermal expansion outlet line connected to top of perpendicular fluidized bed furnace.

JI B K, CHOI J Y, SHIN C M

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Preparing graphene shell comprises performing first heat treatment on a mixture of organic solvent and graphitization catalyst to carburize the catalyst, and forming the shells on surfaces of carburized catalyst by second heat treatment.

CHOI J, SHIN H, YOON S, IN Z, CHOI J Y, SHIN H J, YOON S M

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z