国家/地区 日本（5） 美国（5） 世界知识产权组织（4） 中国（3） 韩国（3） 欧洲专利局（EPO）（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C01B031/02（6）
发明人
公开年 2015（3） 2014（2）
申请年 2014（6）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Apparatus for producing blackbody spectrum, has thermal spreading layer which includes graphene sheet that is configured to reduce spatial variation of heat in plane of thermal spreading layer.

CHOW J R, KETOLA K S, LA KOMSKI D M, TOWNSEND C W, ELIAS W E, MARBLE S J, LAKOMSKI D M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Laminate used for field effect transistor, has mica, self-assembled film formed on mica, and graphene film formed on self-assembled film in which each of molecules has hydrophobic principal chain.

FUJII TAKESHI, SATO MARIKO, FUJII T, SATO M

Graphene laminate for use in switching device and sensor device, has lower piezoelectric material layer that is positioned under lower graphene layer and is provided with negatively-charged surface and positively-charged surface.

LEE S, LEE Y, CHOI J, CHOI J Y, LEE S Y, LEE Y H