国家/地区 日本（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（4） C01B031/04（3） C23C016/26（2）
发明人 FUJII K（5）
公开年 2011（3） 2012（2）
申请年 2010（5）
专利权人 FUJI ELECTRI.（5）

Manufacture of graphene involves forming graphene into film on magnesium oxide.

FUJII K, SATO M

Manufacture of graphene thin film used as transparent conductive film of solar cell, involves forming thin film of cation material on substrate, forming oxidated graphene thin film on substrate and reducing oxidated graphene thin film.

SATO M, FUJII K

Manufacture of graphene film used as preform of carbon material, involves oxidizing graphite, sieving, dispersing graphite oxide remained on sieve in solvent, peeling of graphite oxide in layer form and coating liquid on substrate.

FUJII K

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Manufacture of graphene film involves casting suspension liquid containing oxidized graphene on substrate, heating and reducing cast film in presence of metal hydride.

FUJII K, SHIMIZU A