国家/地区 中国（7） 韩国（4） 美国（4） 世界知识产权组织（2）
IPC部 B（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC B82Y030/00（5） B82Y040/00（4） C01B031/04（4）
C01B032/194（3） C01B032/184（2） C01B032/198（2）
H01L031/0352（2） H01L031/18（2）
发明人 JIN C（9）
公开年 2023（2）
申请年 2014（2）  2019（2）  2022（2） 
专利权人 KOREA INST E.（2） SHANGHAI NAT.（2） UNIV KYUNGHE.（2） UNIV KYUNGHE.（2）

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Preparation of graphene heat conduction film used in consumer electronic product, involves coating graphene oxide slurry, drying to obtain film, treating surface of film using surface treatment liquid, calendering, laminating multi-layered film to obtain semifinished film, and heat-treating.

HU H, JIN C

Preparing cadmium sulfide/copper iron sulfide/reduced graphene oxide nanocomposite photocatalyst for photocatalytic hydrogen production and photodegradation of organic pollutants, involves using catalyst and copper iron sulfide.

GAO Y, HE C, MENG X, FAN H, XU Z, WANG L, JIN C, JIA Y, HUANG B, ZHAO S, FAN M

Preparing nano lithium titanate-graphene porous composite electrode material, comprises preparing graphite oxide dry powder by Hummers method, ball milling dry powder, sintering and cooling naturally to room temperature.

XIANG Y, ZHAO P, CAO G, ZHANG W, ZHANG H, JIN C, QIU J, MING H

Constructing highly-sensitive nitrogen dioxide gas sensor based on Van der Waals junction film by preparing semiconductor quantum dots, then carrying out spin-coated uniform modification with graphene, and controlling annealing conditions.

CAI B, LU J, JIN C

Making graphene composite used to make active material for supercapacitor, involves radiating microwave on graphite oxide-conducting agent mixture, dispersing formed material in liquid and ultrasonic-wave pulverizing, and freeze-drying.

YEON S, JEON M, SHIN K, JIN C, LEE B, PARK S, KIM D, LEE S H, YEON S H, JIN C S, JEON M S, LEE B S, SHIN K H, PARK S K, KIM D H

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Preparation of graphene nanoribbon with visible light response by ultrasonically dispersing graphene oxide into ultrapurified water, evaporating to dryness, performing vacuum reduction, and ultrasonically dispersing in ultrapurified water.

HE D, ZHANG J, XING M, JIN C, LIU R, YANG X