国家/地区 美国（4） 德国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4） B82Y030/00（3） B82Y040/00（3）
C01B031/02（2） C23F001/02（2） H01L029/16（2）
H01L029/78（2）
发明人 MAAROUF A（4）
公开年 2013（4）
申请年 2011（3） 
专利权人 INT BUSINESS.（4） EGYPT NANOTE.（2） EGYPT NANOTE.（2） MAAROUF A（2）
MARTYNA G J（2）

Producing graphene nanomesh based charge sensor, by generating holes in graphene to create graphene nanomesh, passivating edge of each hole of mesh, functionalizing passivated edge of each of holes of nanomesh with chemical compound.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Making a semiconductor device, comprises creating nanoholes in a graphene sheet to form a graphene nanomesh which includes carbon atoms, passivating a dangling bond on the carbon atoms, and doping the passivated graphene nanomesh.

ABOUKANDIL A, MAAROUF A, MARTYNA G J, MOHAMED H, NEWNS D M