国家/地区 中国（2） 世界知识产权组织（2）
IPC部 C（4） B（2） H（2）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D