国家/地区 中国（3） 美国（3）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC H01B005/14（5）
发明人 FAN T（2） LIU Y（2） MIN Y（2）
SONG J（2） TONG S（2） ZHANG L（2）
公开年 2014（5）
申请年 2013（4） 
专利权人 NANJING XINY.（2） YANCHENG ZEN.（2）

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Preparation of transparent conductive graphene thin film used for e.g. organic light-emitting diode, by performing Hummers with carbon material, dispersing graphene oxide in organic solvent and substrate, and opening water groove.

FAN T, LIU Y, MIN Y, SONG J, TONG S, ZHANG L

Preparing large area multifunctional graphene thin film comprises ultrasonically dispersing graphite oxide in acidic solution, then adding conductive polymer monomer and oxidizing agent, and reacting and filtering mixture, then washing.

FAN T, LIU Y, MIN Y, SONG J, TONG S, ZHANG L