国家/地区 中国（5）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C014/35（8）
发明人 LI L（3） XU S（2）
公开年 2021（8）
申请年 2020（4）  2021（4） 
专利权人

Preparing high-orientation and high thermal conductivity graphene/copper composite material used as thermal-conducting reinforcing body for electronic device heat power density, comprises e.g. adding isopropanol into ethanol, ultrasonically processing, and forming highly oriented graphene film.

LI L, ZHANG W, DONG L, HUO W, LI X, CHANG G

Manufacturing method of orderly arrangement and carbon deposition composite coating of graphene carbon nanotubes on metal substrate, involves depositing particles on substrate as catalyst of carbon to form carbon structural layer.

CHIEN S P

Graphene-modified silicon integrated energy storage film has graphene layer that is arranged on surface of silicon substrate, and energy storage film layer that is arranged on surface of graphene layer.

LIU M, JIN L

Method for ultrasonic-assisted three dimensional (3D) printing of turbocharged blades and nano-gradient coatings, involves mixing powder with composition ratio with nickel and cobalt with specified percentage of total component content of titanium carbon powder into three portions.

ZHAO C, XU S, ZHANG S, XUE X

METHOD FOR CREATING QUANTUM DOTS FOR ELEMENT BASE OF RADIO ENGINEERING.

OMOROKOV D B

Method for preparing graphene, involves applying closed magnetic field parallel to surface of carbon target, and applying electric field perpendicular to target surface and substrate to form graphene film on substrate.

XU S

Graphene aerogel-based energy collection and self-cleaning system useful in field of mechanical energy harvesting, comprises layer of metal collector, sputtered on both sides of freeze-dried graphene aerogel by magnetron sputtering.

DING J, ZHOU X, LI L, CHENG G, YUAN N, HU X, DONG X

Preparing graphene oxide metal nanosheet composite material comprises e.g. coating graphene oxide slurry on glass substrate, drying to form graphene oxide film, placing glass substrate of graphene oxide film into plasma etching machine.

QU X, LI L, HUANG M