国家/地区 美国（4） 中国（3） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/50（4）
发明人
公开年 2017（4）
申请年 2016（4） 
专利权人

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Formation of graphene film on substrate e.g. glass, involves depositing graphene on surface of substrate to form graphene crystal layer, depositing graphene oxide layer on layer, and depositing graphene on resulting composite layer.

BI H, HUANG F, LIU X, SONG Z, TANG Y, XIU T

Method for fabricating graphene nano-mesh in e.g. transparent display device, involves forming graphene nano-mesh including openings by etching oxide layer, and transferring graphene nano-mesh onto substrate after removing catalyst layer.

LEE J, KIM Y, LEE C, LEE J H, KIM Y S, LEE C S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V