国家/地区 日本（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC H01B005/14（4）
发明人
公开年 2015（2）
申请年 2014（4）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Preparation method of reduced graphene oxide (RGO) film, involves reducing graphene oxide thin film using chemical reduction method and pressure-assisted thermal reduction method, respectively, to form reduced graphene oxide film.

KIM S H, JANG J, SHIN K, SHIN K H

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y