国家/地区 韩国（6） 中国（3） 欧洲专利局（EPO）（3） 印度（3） 日本（3） 墨西哥（3） 俄罗斯（3） 台湾（3） 美国（3） 世界知识产权组织（3）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（5） C01B031/04（4） B82Y030/00（3）
C23C016/26（3） H01L021/205（3） B82B003/00（2）
B82Y040/00（2） C01B032/188（2） C30B029/02（2）
H01L031/04（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（6）
申请年 2009（6）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Production of graphene oxide aqueous solution for manufacturing graphene films and powder, involves injecting graphene oxide solution into membrane column, and sonicating column in hydrochloric acid aqueous solution and ultrapure water.

JUNG J C

Manufacture of graphene layer used for electronic circuit, involves mounting molecular beam epitaxy chamber on substrate and forming graphene layers by supplying carbon source on substrate.

SEO D

Manufacture of graphene for, e.g. solar cells, involves providing metallic foil, forming carbon thin film as metal thin film, irradiating laser to carbon film, and cooling mixed layer of carbon and metal formed by laser irradiation.

HUN L B, HWANG H, CHO C

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V