国家/地区 日本（9） 美国（5） 世界知识产权组织（5） 韩国（3） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B032/15（9）
发明人
公开年 2014（9）
申请年 2013（6）  2014（3） 
专利权人 FUJITSU LTD（2）

Production of graphene hollow structure body for graphene spherical hollow body integrated electrode and graphene spherical hollow body integrated capacitor involves mixing and dispersing polymer molding and graphene oxide powder.

SHAO Q G, QIN L C, TANG J

Graphene powder used as conductive support agent of lithium-ion battery electrode, is formed by adhering dispersing agent having quinophthalone skeleton and polar group to graphene surface.

SHIGETA K, KUBOTA Y

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Carbon material used for negative electrode of lithium secondary battery, consists of oxide amorphous carbon material containing graphene oxide layer.

TAMURA N, CHENG Q, YUGE R

Preparation of graphene suspension used as additive for supercapacitor electrode, involves preparing graphene flakes, preparing polar or nonpolar fluid, and suspending graphene flakes in fluid by mixing until suspension is uniform.

BLAIR R, STOLTZ R, BULLINGTON J

Nanographitic composite for use as anode in lithium ion battery for commercial application, has graphene nanoplatelets coating portion of nanoscale particles to form layer made up of overlapping nanoplatelets.

BAMBHANIA H M, DO I, WANG H, WANG L

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Graphene sheet composition used for negative electrode active material for lithium battery, and conductive support agent for electrode for battery, comprises graphene component, and is formed by treating graphite in supercritical fluid.

IKENOUE Y, KUROZUMI T, HONMA I, TOMAI T

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T