国家/地区 美国（26）
IPC部 C（26）
IPC大类 C01（26） H01（25） C23（10）
B01（3） B82（2） C25（2）
H05（2）
IPC小类 C01B（26）
IPC C23C016/26（9） C01B032/186（8） H01L021/02（7）
H01M010/0525（7） C01B032/184（6） H01M004/62（6）
H01L021/285（5） H01L021/768（5） H01L023/532（5）
H01M004/36（5） H01M004/38（5） C01B032/182（4）
H01M004/04（4） C23C016/02（3） H01M004/139（3）
发明人 SHIN K（4） LEE C S（3） SHIN K W（3）
BYUN K（2） BYUN K E（2） ELSAYED K A M（2）
LEE C（2） MAAROUF A A（2）
公开年 2023（26）
申请年 2022（26）
专利权人 SAMSUNG ELEC.（4） GM GLOBAL TE.（2） LYTEN INC（2） UNIV IMAM AB.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Producing and depositing graphene film on anode involves creating graphite dispersion, electrostatically charging graphene dispersion by addition of organic amine salt, and applying conductive graphene film to anode by electrophoretic deposition.

WEIJIA L, GONG S

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Preparing carbon particle, involves loading hydrocarbon gas into inert gas to form gas mixture within reactor, heating gas mixture to form heated gas mixture, and mixing natural gas into heated gas mixture within the reactor to form carbon particle.

HANSON R J, JOHNSON P L, TAYLOR R W, HARDMAN N J

Anode used for battery, comprises carbon shell comprising outer surface, inner volume and several pinholes, anode particles, and graphene flakes(s) arranged on outer surface of carbon shell.

MOGHIMIAN N, NAZARPOUR S

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

System for producing clean energy from methane, comprises high-power reactor that dissociates methane into solid carbon and hydrogen gas, and to abate emission of greenhouse gasses; and metal-decorated porous 3D carbonaceous material and graphene-containing conjoined allotropes.

NICOLE J F, STOWELL M

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T