国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人 WANG Q（6）
公开年 2014（6）
申请年 2014（6） 
专利权人 UNIV CHANGZH.（3） JIANGNAN GRA.（2）

Preparation of nitrogen-doped graphene involves ultrasonically cleaning silicon piece surface, placing aromatic hydrocarbon small molecule in crucible, thermal evaporating, and vapor-depositing to silicon dioxide to form precursor layer.

SUN X, WANG Q, ZHANG Y, ZHUO Q

Forming reduced graphene oxide thin film, by ultrasonically dispersing graphene oxide solution, coating the solution on indium tin oxide glass substrate, drying and placing substrate with graphene oxide film in a plasma discharge chamber.

LI J, WANG X, WEI J, WANG Q, CHEN C

Preparing graphene nanobelt comprises polishing and cleaning a silicon carbide substrate, carrying out hydrogen etching, heating etched step-shaped silicon carbide substrate, and carrying out helium ion etching.

LI Y, WANG Q, ZHU J, REN N, WANG W, SHAO Y, ZHANG T

Non-destructive method for transferring large-area graphene thin film involves aligning graphene thin film grown on metal substrate with transfer medium, and processing obtained material and platinum electrode in electrolytic bath.

DING J, YE E, GU B, WANG Q

Preparation of interfacial self-assembly sulfonated graphene film, used as e.g. transparent electric conduction thin film, comprises loading deionized water in beaker, pouring organic solvent, and injecting sulfonated graphene solution.

DING J, YE E, GU B, WANG Q

Preparation of hydrophilic graphene thin film for supercapacitor involves adding deionized water to graphene oxide powder, ultrasonically dispersing, adding iron powder and hydrochloric acid solution, mechanically stirring, and standing.

DING J, WU H, GU B, WANG Q