国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5）
IPC小类 C01B（5）
IPC C23C014/06（5）
发明人
公开年 2018（5）
申请年 2018（3） 
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Graphene nanoribbon composite film preparation used in energy storage, liquid crystal device, electronic device or biological material, involves infiltrating graphene sheet into surface of composite film by dispersion solvent.

DENG J, LIN Y, ZOU H

Preparation of graphene involves forming metal catalyst film on surface of amorphous carbon film, vacuumizing, placing sample of silicon/amorphous carbon/metal catalyst, heat-preserving and air-cooling.

WANG A, LIU P, ZHANG D, GUO T, LI H, KE P

Preparation of graphene film for use in e.g. display, involves mixing expanded graphite with water, mixing graphene precursor, surfactant, reducing agent and metal salt in solvent, adding sulfuric acid solution.