国家/地区 中国（5）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/04（5） B82Y030/00（4） C01B031/02（4）
B82Y040/00（3） C30B029/02（3） B82B003/00（2）
C01B032/182（2） C01B032/186（2） C01B032/188（2）
C01B032/194（2） C23C014/48（2） C23C016/56（2）
H01B001/04（2） H01L031/04（2）
发明人 VEERASAMY V（5）
公开年 2011（4）
申请年 2009（3） 
专利权人 GUARDIAN GLA.（5） GUARDIAN IND.（5） GUARDIAN IND（4） VEERASAMY V .（2）

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V