国家/地区 中国（188）
IPC部 B（188）
IPC大类 B01（188）
IPC小类 C01B（188）
IPC C01B031/04（188）
发明人 KWON W（7） KWON W J（7） WANG J（7）
WANG Y（7） ZHANG X（7） ZHANG Y（7）
LI J（6） ZHANG L（6） LI M（5）
LI X（5） SHEN Y（5） YOO K（5）
YOO K H（5） ZHU Y（5） BEDWORTH P V（4）
公开年 2016（46） 2015（42） 2014（25） 2013（20） 2017（20） 2012（18） 2011（9） 2009（4） 2018（2）
申请年 2016（41）  2015（39）  2014（31）  2013（27）  2012（23）  2011（10）  2017（6）  2010（4）  2008（3）  2007（2）  2009（2） 
专利权人 LG CHEM LTD（7） SAMSUNG ELEC.（6） HANWHA TECHW.（5） LG CHEM CO L.（5）
LOCKHEED COR.（4） LOCKHEED MAR.（4） SAMSUNG TECH.（4） UNIV ZHEJIAN.（4）
BEIJING INST.（3） EMPIRE TECHN.（3） TORAY IND IN.（3） UNIV MANCHES.（3）
UNIV SHANGHA.（3） ZHANG L（3） APPLIED GRAP.（2） AVIATION IND.（2）
CENT NAT REC.（2） CHINESE ACAD.（2） ENPAL TECHNO.（2） HANWHA AEROS.（2）

High-pressure homogenizing apparatus for producing graphene, has baffle plates that are arranged in flow paths to partition micro-channels into spaces along width direction or height direction.

KIM E J, YOO K H, IM Y H, KIM I Y, KWON W J, KIM E, YOO K, IM Y, KIM I, KWON W

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Making graphene metal nanoparticle-composite, comprises e.g. making graphene by applying shearing force to solution of graphite-based material, preparing metal nanoparticles by applying shearing force to solution of e.g. metal precursor.

KIM T Y, HONG J P, KIM T, HONG J

High pressure homogenization apparatus for manufacturing graphene, has channel module including baffle to partition micro-channel into multiple spaces along width direction or height direction.

KIM E J, YOO K H, IM Y H, LEE J Y, KWON W J, KIM E, YOO K, IM Y, LEE J, KWON W

Graphene and graphene oxide production involves obtaining quantity of carbon rich materials in solid state, mixing carbon rich material with solvent, surfactant, and additive for forming mixture, and then conducting mixture.

ZENG T, QI K, QI K Z

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

System for processing of carbonaceous compositions, has tank agitator configured to agitate graphene oxide in tank after graphene oxide is transferred to tank, where reaction system transfers graphene oxide from reaction vessel to tank.

LAINE S

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Multilayered graphene material used in e.g. energy storage device, comprises graphene layers forming shell-like structure encompassing void space with required volume for expanding nano/microstructures without deforming shell-like structure.

ODEH I N, LIU Y, ODEH I