国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（3） G03F007/20（3） C01B032/194（2）
G03F001/62（2） H01L021/027（2）
发明人
公开年 2016（2）
申请年 2016（4）
专利权人

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Method for manufacturing pellicle for lithographic apparatus involves removing first substrate portion to form freestanding membrane from graphene layer, in which freestanding membrane is supported by second substrate portion.

PETER M, ABEGG E A, GIESBERS A J, KLOOTWIJK J H, NASALEVICH M A, VAN DEN EINDEN W T, VAN DER ZANDE W J, VAN ZWOL P, VERMEULEN J P M, VLES D F, VOORTHUIJZEN W, GIESBERS A J M, VAN ZWOL P J, VOORTHUIJZEN W P, VAN DEN EINDEN W T A J, VERMEULEN J P M B

Removal of graphene used for patterning monolayer or multilayer graphene film, by irradiation with UV light of specific wavelength in specific environment.

LIU H, WANG W, TAN H, QIN X

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H