国家/地区 德国（6）
IPC部 C（6）
IPC大类 C01（6） B82（3） C23（3）
B32（2） H01（2）
IPC小类 C01B（6）
IPC C01B031/04（5） C01B031/02（3） B82B003/00（2）
B82Y030/00（2） B82Y040/00（2）
发明人
公开年 2013（6）
申请年 2011（6）
专利权人

Manufacture of graphene on polycrystalline silicon carbide used as bearing element in mechanical engineering, involves polishing silicon carbide components, cleaning, and graphitizing polished surface by annealing.

BENNEWITZ R, ASLAN M, WAEHLISCH C F

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Manufacture of graphene nano tape for electronic circuit, involves heating precursor material in vacuum in presence of anisotropic metal having specified surface redox potential.

ZHONG D, CHI L, ZACHARIAS H, FUCHS H, MUELLEN K, FENG X, MULLEN K, CHII1 4 L

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Formation of graphene layer for electrode of e.g. emitter layer system, involves forming amorphous carbon layer on substrate by physical vapor deposition, and carrying out flash annealing in atmosphere of controlled composition.

SCHREIL M, BURGHART M, KAUFMANN M

Preparing a dispersion, useful e.g. to prepare a composite and coat a surface, comprises applying a mixture comprising graphene and a liquid under pressure and passing the pressurized mixture via an opening.

TOELLE F J, FABRITIUS M, MUELHAUPT R