国家/地区 日本（4）
IPC部 B（4）
IPC大类 C01（4） B82（3） H01（3）
C23（2）
IPC小类 C01B（4）
IPC C01B032/15（4）
发明人
公开年 2018（4）
申请年 2017（3） 
专利权人

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Preparation of graphene in formation of graphene film on insulated substrate, involves providing oxidation mild atmosphere, and growing graphene in substrate in pressure-reduced atmosphere by vapor phase growth method.

KANEKO S, KATO C, TANAKA S, OZAWA T, YASUHARA S

Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.

MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T